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FQT1N60CTF-WS +BOM

N-Channel 600 V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-4

Manufacturer:

onsemi
Mfr.Part #:

FQT1N60CTF-WS
Datasheet:

FQT1N60CTF-WS Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQT1N60CTF-WS

FQT1N60CTF-WS General Description

The FQT1N60CTF-WS power MOSFET, designed with ON Semiconductor's proprietary planar stripe and DMOS technology, delivers exceptional performance in power management applications. With its reduced on-state resistance and superior switching performance, this MOSFET is ideal for use in switched mode power supplies, active power factor correction, and electronic lamp ballasts. Its high avalanche energy strength further enhances its suitability for demanding environments

Key Features

Fully RoHS compliant
Low gate charge, 4.8nC typ.
Avalanche tested to ensure reliability
100% tested for high quality assurance
R_DS(on) = 9.3Ω(Typ.) @V_GS = 10 V
High current handling, 0.2A typ.

Application

Fashionable
Trendy
Stylish

Specifications

Source Content uid	FQT1N60CTF-WS	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	600 V
Drain Current-Max (ID)	0.2 A	Drain-source On Resistance-Max	11.5 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	6 pF
JESD-30 Code	R-PDSO-G4	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	250
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	2.1 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON