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See Technical Specifications

FQT4N20LTF +BOM

N-Channel 200 V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4

Manufacturer:

onsemi
Mfr.Part #:

FQT4N20LTF
Datasheet:

FQT4N20LTF Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQT4N20LTF

FQT4N20LTF General Description

When it comes to high-performance power MOSFETs, the FQT4N20LTF stands out as a prime example of technological advancement. With its advanced planar stripe and DMOS technology, this MOSFET sets a new standard for efficiency and reliability in power electronics. Designed for optimal performance in applications such as power factor correction and electronic ballasts, this device offers superior switching capabilities and high avalanche energy strength

Key Features

Low power dissipation (Typ. 30mW)
High frequency operation up to 50kHz
R_DS(on)= 1.8Ω( Typ.) @V_GS = 10 V
I_D = 2.5A (Typ.)

Application

Smart LED TV deal
Energy-efficient lighting

Specifications

Source Content uid	FQT4N20LTF	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Avalanche Energy Rating (Eas)	52 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	200 V
Drain Current-Max (ID)	0.85 A	Drain-source On Resistance-Max	1.4 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G4
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	2.2 W	Pulsed Drain Current-Max (IDM)	3.4 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON