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RF Power Field-Effect Transistor
NI-860C3Manufacturer:
Mfr.Part #:
MRF372
Datasheet:
Part Life Cycle Code:
Transferred
ECCN Code:
EAR99
Case Connection:
SOURCE
Configuration:
SINGLE
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-860C3, CASE 375G-04, 4 PIN
Part Life Cycle Code | Transferred | Reach Compliance Code | |
ECCN Code | EAR99 | Case Connection | SOURCE |
Configuration | SINGLE | DS Breakdown Voltage-Min | 68 V |
Drain Current-Max (ID) | 17 A | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | JESD-30 Code | R-CDFM-F4 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 200 °C |
Polarity/Channel Type | N-CHANNEL | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Form | FLAT |
Terminal Position | DUAL | Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
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