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See Technical Specifications

MRFX1K80NR5 +BOM

Omnidirectional radiation and transmission capabilities guarantee

Manufacturer:

NXP Semiconductor
Mfr.Part #:

MRFX1K80NR5
Datasheet:

MRFX1K80NR5 Datasheet (PDF)
F<sub>i(RF)</sub> [max] (MHz):

400
Number Of Pins:

4
Amp Class:

AB
Test Signal:

Pulse
EDA/CAD Models:

Request Free CAD Models for MRFX1K80NR5

MRFX1K80NR5 General Description

Featuring a drain source voltage of 179V, the MRFX1K80NR5 RF FET transistor offers reliable performance in demanding RF applications. With a power dissipation of 3.333kW, this transistor can handle high-power RF signals with ease. The OM-1230 case ensures optimal thermal management and protection for the transistor, making it suitable for a variety of applications. Operating over a frequency range of 1.8MHz to 400MHz, this transistor delivers high RF performance

Key Features

Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V

Specifications

f<sub>i(RF)</sub> [max] (MHz)	400	Number of pins	4
Amp Class	AB	Test Signal	Pulse
Supply Voltage (Typ) (V)	65	Class	AB
Die Technology	LDMOS	Thermal Resistance (Spec) (℃/W)	0.06
P1dB (Typ) (dBm)	62.6	Security Status	COMPANY PUBLIC
Frequency (Min-Max) (MHz)	1.8,400	Efficiency (Typ) (%)	75.7
Frequency Band (Hz)	1800000,400000000	Description	Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
f<sub>i(RF)</sub> [min] (MHz)	1.8	P1dB (Typ) (W)	1800
Gain (Typ) (dB)	24.4	Power Gain (Typ) (dB) @ f (MHz)	24.4 @ 230
Frequency (Max) (MHz)	400	Frequency (Min) (MHz)	1.8
Frequency (Min-Max) (GHz)	0.0018000001 to 0.4	f<sub>range</sub> [max] (MHz)	400
f<sub>range</sub> [min] (MHz)	1.8	Rth(j-a) (K/W)	0.06
Matching	unmatched	Modes of Operation	pulsed radio frequency signal