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RF MOSFET Transistors HV6E 900MHZ 200W NI780HS
BGAManufacturer:
Mfr.Part #:
MRFE6S9201HSR5
Datasheet:
Number Of Pins:
3
Drain To Source Breakdown Voltage:
66 V
Drain To Source Voltage (Vdss):
66 V
Element Configuration:
Single
EDA/CAD Models:
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RF Mosfet 28 V 1.4 A 880MHz 20.8dB 40W NI-780S
Number of Pins | 3 | Drain to Source Breakdown Voltage | 66 V |
Drain to Source Voltage (Vdss) | 66 V | Element Configuration | Single |
Frequency | 880 MHz | Gain | 20.8 dB |
Gate to Source Voltage (Vgs) | 10 V | Max Operating Temperature | 150 °C |
Min Operating Temperature | -65 °C | Output Power | 40 W |
Packaging | Tape & Reel (TR) | Test Current | 1.4 A |
Test Voltage | 28 V | Voltage Rating | 66 V |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $337.917 | $337.92 |
200+ | $134.832 | $26,966.40 |
500+ | $130.325 | $65,162.50 |
1000+ | $128.100 | $128,100.00 |
The prices below are for reference only.