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MRFX600GSR5 +BOM

Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V

MRFX600GSR5 General Description

RF Mosfet 65 V 100 mA 1.8MHz ~ 400MHz 26.4dB 600W NI-780GS-4L

NXP Semiconductor Inventory

Key Features

Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
NXP Semiconductor Original Stock
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Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs Series -
Technology LDMOS Configuration Dual
Frequency 1.8MHz ~ 400MHz Gain 26.4dB
Voltage - Test 65 V Current Rating (Amps) 10µA
Noise Figure - Current - Test 100 mA
Power - Output 600W Voltage - Rated 179 V
Mounting Type Chassis Mount Base Product Number MRFX600
Image Thumbnail - NI-780H-4L, NI-780S-4L, NI-780GS-4L Package Image

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MRFX600GSR5 Datasheet PDF

Preliminary Specification MRFX600GSR5 PDF Download

MRFX600GSR5 PDF Preview

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