This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

MRFE6VS25NR1 +BOM

MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2

Manufacturer:

NXP Semiconductor
Mfr.Part #:

MRFE6VS25NR1
Datasheet:

MRFE6VS25NR1 Datasheet (PDF)
Technology:

LDMOS
Frequency:

512MHz
Gain:

25.4dB
Voltage - Test:

50 V
EDA/CAD Models:

Request Free CAD Models for MRFE6VS25NR1

MRFE6VS25NR1 General Description

The MRFE6VS25NR1 is a powerful RF transistor designed to handle high-voltage and high-frequency applications. With a drain-source voltage (Vds) of 133VDC and an operating frequency range of 1.8MHz to 2000MHz, this transistor is well-suited for RF amplification and switching tasks in a variety of industries. Its TO-270 package and 2 pins allow for easy integration into existing circuit designs, while its maximum operating temperature of 225°C ensures reliable performance in demanding environments. Furthermore, with no Substances of Very High Concern (SVHC) and a Moisture Sensitivity Level (MSL) of 3, this transistor is both environmentally friendly and capable of withstanding storage for up to 168 hours. Whether you're working on communication systems, radar equipment, or industrial RF applications, the MRFE6VS25NR1 transistor delivers the performance and reliability you need

Key Features

Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs	Series	-
Technology	LDMOS	Frequency	512MHz
Gain	25.4dB	Voltage - Test	50 V
Current Rating (Amps)	-	Noise Figure	-
Current - Test	10 mA	Power - Output	25W
Voltage - Rated	133 V	Mounting Type	Surface Mount
Base Product Number	MRFE6