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See Technical Specifications

MRF6S20010NR1 +BOM

) Available in tape and reel packaging for convenience

Manufacturer:

NXP Semiconductor
Mfr.Part #:

MRF6S20010NR1
Datasheet:

MRF6S20010NR1 Datasheet (PDF)
Feature-packaging:

Tape and Reel
Feature-pin-count:

3
Feature-cecc-qualified:

No
Feature-military:

No
EDA/CAD Models:

Request Free CAD Models for MRF6S20010NR1

MRF6S20010NR1 General Description

The MRF6S20010NR1 is a top-of-the-line RF transistor, specifically engineered for high-power applications in the 2300 to 2700 MHz frequency range. Boasting a typical gain of 18.5 dB and the capacity to deliver an impressive 10 watts of output power with 50% efficiency, this transistor is a powerhouse. Its high thermal stability ensures consistent and reliable performance, even in demanding high-power scenarios. Additionally, the MRF6S20010NR1 exhibits exceptional linearity characteristics, making it a versatile choice for various linear amplifier designs

Key Features

High power gain: typically 17.5 dB at 1930 MHz
High output power: typically 43.5 dBm (20W) at 1930 MHz
High efficiency: typically 44% at 1930 MHz
Good thermal stability
Integrated ESD protection
RoHS compliant

Application

Cellular base station amplifiers
Broadcast amplifiers
Military communications systems
Public safety radio systems
Wireless infrastructure

Specifications

feature-packaging	Tape and Reel	feature-rad-hard
feature-pin-count	3	feature-cecc-qualified	No
feature-esd-protection		feature-escc-qualified
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc	Yes	feature-svhc-exceeds-threshold	Yes