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NDC7001C +BOM

Field Effect Transistor Dual N & P Channel Enhancement Mode 60V, 3000-REEL

NDC7001C General Description

Elevate your electronic projects with the NDC7001C, a standout product from ON Semiconductor's impressive lineup of transistors. With its high cell density DMOS technology, this component delivers exceptional performance, boasting minimal on-state resistance, durability, and quick switching abilities. Whether you require low voltage, low current solutions, or are tackling power supply challenges, the NDC7001C is a versatile and dependable choice for a wide range of applications. Trust in the reliability and efficiency of the NDC7001C to take your projects to the next level

Key Features

  • Q2: High voltage tolerance
  • Low input capacitance
  • Ultra-low power consumption
  • Improved reliability

Application

  • Suitable for any task.
  • Essential for all needs.
  • Works well in all situations.

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 510 mA, 340 mA Rds On - Drain-Source Resistance 1 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V, 3.5 V
Qg - Gate Charge 1.5 nC, 2.2 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 960 mW
Channel Mode Enhancement Series NDC7001C
Configuration Dual Fall Time 8 ns, 10 ns
Height 1.1 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 8 ns, 10 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time 14 ns, 8 ns Typical Turn-On Delay Time 2.8 ns, 3.2 ns
Width 1.6 mm Part # Aliases NDC7001C_NL
Unit Weight 0.001270 oz

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