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Field Effect Transistor in P-Channel Enhancement Mode, featuring -60V voltage, -0.12A current, and 10Ω impedance
SOT-23-3Manufacturer:
Mfr.Part #:
NDS0610
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
P-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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This P-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0610 can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 120 mA | Rds On - Drain-Source Resistance | 10 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3.5 V |
Qg - Gate Charge | 2.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 360 mW |
Channel Mode | Enhancement | Series | NDS0610 |
Configuration | Single | Fall Time | 6.3 ns |
Height | 1.2 mm | Length | 2.9 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 6.3 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 10 ns | Typical Turn-On Delay Time | 2.5 ns |
Width | 1.3 mm | Part # Aliases | NDS0610_NL |
Unit Weight | 0.000282 oz |
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Qty. | Unit Price | Ext. Price |
---|---|---|
5+ | $0.101 | $0.50 |
50+ | $0.082 | $4.10 |
150+ | $0.073 | $10.95 |
500+ | $0.067 | $33.50 |
3000+ | $0.054 | $162.00 |
6000+ | $0.052 | $312.00 |
The prices below are for reference only.
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