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60V 2.3A 250mΩ@2.3A,10V 900mW 3V@250uA 2 P-Channel SO-8 MOSFETs ROHS
SOIC-8Manufacturer:
Mfr.Part #:
NDS9948
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
P-Channel
Number Of Channels:
2 Channel
EDA/CAD Models:
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The NDS9948 P-Channel MOSFET represents a fusion of technological innovation and practical functionality, making it an ideal choice for power management applications. With its rugged gate design and PowerTrench process optimization, this component delivers reliable performance in challenging environments. Engineers can leverage the wide range of gate drive voltage ratings provided by the NDS9948 MOSFET to design efficient and adaptable systems that meet specific power management requirements. By incorporating this versatile and robust component into their projects, designers can achieve optimal performance and longevity in their applications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 2.3 A | Rds On - Drain-Source Resistance | 138 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 13 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | NDS9948 | Configuration | Dual |
Fall Time | 3 ns | Forward Transconductance - Min | 5 S |
Height | 1.75 mm | Length | 4.9 mm |
Product Type | MOSFET | Rise Time | 9 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 2 P-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 16 ns | Typical Turn-On Delay Time | 6 ns |
Width | 3.9 mm | Part # Aliases | NDS9948_NL |
Unit Weight | 0.006596 oz |
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