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NDT2955 +BOM

P-Channel Enhancement Mode Field Effect Transistor with -60V Voltage Rating, -2.5A Current Rating, and 300mΩ Resistance

Manufacturer:

Onsemi
Mfr.Part #:

NDT2955
Datasheet:

NDT2955 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for NDT2955

NDT2955 General Description

Fairchild Semiconductor's NDT2955 is a high-quality 60V P-Channel MOSFET that offers exceptional performance in power management applications. Utilizing their advanced Trench process, this MOSFET delivers reliable and efficient power control, making it an ideal choice for a wide range of electronic systems

Key Features

Small size and low weight
R_DS(ON) = 350mΩ @ V_GS = -5.5V
-4A, -30V operating range for sensitive applications
Robust and reliable construction
High-frequency performance ensured
-7A, -70V operation for extreme conditions

Application

Efficient power conversion
Compact and powerful
Ideal for energy management

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	2.5 A
Rds On - Drain-Source Resistance	95 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	4 V	Qg - Gate Charge	15 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	3 W	Channel Mode	Enhancement
Series	NDT2955	Configuration	Single
Fall Time	6 ns	Forward Transconductance - Min	5.5 S
Height	1.8 mm	Length	6.5 mm
Product Type	MOSFET	Rise Time	10 ns
Factory Pack Quantity	4000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	19 ns
Typical Turn-On Delay Time	12 ns	Width	3.5 mm
Part # Aliases	NDT2955_NL	Unit Weight	0.003951 oz