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NDP6060 +BOM
N-Channel Enhancement Mode Field Effect Transistor 60V, 48A, 25mΩ
TO-220-
Manufacturer:
-
Mfr.Part #:
NDP6060
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Datasheet:
-
Case Outline:
340AT
-
MSL Temp (°C):
0
-
Container Type:
TUBE
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Technology:
Si
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EDA/CAD Models:
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NDP6060 General Description
Designed with ON Semiconductor's high cell density DMOS technology, the NDP6060 N-Channel power field effect transistors are tailored to deliver exceptional performance in low voltage applications. With minimized on-state resistance, superior switching capabilities, and resilience to high energy pulses in avalanche and commutation modes, these transistors are well-suited for use in automotive, DC/DC converters, PWM motor controls, and other battery-powered circuits requiring fast switching, low power loss, and resistance to transients. This makes the NDP6060 a reliable choice for applications where high performance and durability are essential
Key Features
- 48A, 60V. RDS(ON) = 0.025Ω@ VGS=10V.
- Critical DC electrical parameters specified at elevated temperature.
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
- 175°C maximum junction temperature rating.
- High density cell design for extremely low RDS(ON).
- TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
Application
- This product is general usage and suitable for many different applications.
Specifications
Status | Active | Case Outline | 340AT |
MSL Temp (°C) | 0 | Container Type | TUBE |
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 48 A | Rds On - Drain-Source Resistance | 25 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 70 nC | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 100 W |
Channel Mode | Enhancement | Series | NDP6060 |
Configuration | Single | Fall Time | 77 ns |
Height | 16.3 mm | Length | 10.67 mm |
Product Type | MOSFET | Rise Time | 145 ns |
Factory Pack Quantity | 50 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 28 ns | Typical Turn-On Delay Time | 10 ns |
Width | 4.7 mm | Part # Aliases | NDP6060_NL |
Unit Weight | 0.068784 oz |
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NDP6060 Datasheet PDF
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In Stock: 7,816
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