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NDT452AP +BOM

P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

NDT452AP
Datasheet:

NDT452AP Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for NDT452AP

NDT452AP General Description

The ON Semiconductor NDT452AP is a Power SOT P-Channel enhancement mode power field effect transistor that utilizes the latest DMOS technology to deliver superior performance in low voltage applications. With its high cell density design, this transistor minimizes on-state resistance and ensures excellent switching capabilities, making it ideal for use in notebook computer power management and DC motor control. Whether you're designing a system that requires efficient power management or looking to enhance the performance of your DC motor control applications, the NDT452AP offers the reliability and precision you need

Key Features

-5A, -30V.
R_DS(ON) = 0.065 Ω @ V_GS = -10V
R_DS(ON) = 0.1 Ω @ V_GS = -4.5V
High density cell design for extremely low R_DS(ON)
High power and current handling capability in a widely used surface mount package

Application

This product is general usage and suitable for many different applications.

Specifications

Source Content uid	NDT452AP	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	55 Weeks
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	5 A
Drain-source On Resistance-Max	0.065 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G4	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-65 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	3 W	Pulsed Drain Current-Max (IDM)	15 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON