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NDP4060L +BOM

Low Level FET for Enhancement

NDP4060L General Description

N-Channel 60 V 15A (Tc) 50W (Tc) Through Hole TO-220-3

Key Features

  • 15A, 60V. RDS(ON) = 0.1Ω @ VGS = 5V
  • Low drive requirements allowing operation directly from logic
  • drivers. VGS(TH) <2.0V.
  • Critical DC electrical parameters specified at elevated
  • temperature.
  • Rugged internal source-drain diode can eliminate the need
  • for an external Zener diode transient suppressor.
  • 175°C maximum junction temperature rating.
  • High density cell design for extremely low RDS(ON).
  • TO-220 and TO-263 (D2PAK) package for both through hole

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V
Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
FET Feature - Power Dissipation (Max) 50W (Tc)
Operating Temperature -65°C ~ 175°C (TJ) Mounting Type Through Hole
Product Category MOSFET Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 15 A
Rds On - Drain-Source Resistance 100 mOhms Vgs - Gate-Source Voltage - 16 V, + 16 V
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 50 W Channel Mode Enhancement
Configuration Single Fall Time 61 ns
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 151 ns
Factory Pack Quantity 50 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 35 ns Typical Turn-On Delay Time 9 ns
Width 4.7 mm Part # Aliases NDP4060L_NL
Unit Weight 0.068784 oz

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