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NDS8410A +BOM

N-Channel 30 V 10.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

NDS8410A General Description

N-Channel 30 V 10.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Key Features

  • 10.8 A, 30 V
  • RDS(ON) = 12 mW @ VGS = 10 V
  • RDS(ON) = 17 mW @ VGS = 4.5 V
  • Ultra-low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Specifications

Source Content uid NDS8410A Part Life Cycle Code Obsolete
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 4 Weeks Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 10.8 A
Drain-source On Resistance-Max 0.012 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 160 pF JESD-30 Code R-PDSO-G8
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W Pulsed Drain Current-Max (IDM) 50 A
Surface Mount YES Terminal Form GULL WING
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 72 ns
Turn-on Time-Max (ton) 41 ns

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