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20V 1A 500mW 300mΩ@4.5V,1.1A 1V@250uA P Channel SOT-23-3 MOSFETs ROHS
SSOT-3Manufacturer:
Onsemi
Mfr.Part #:
NDS332P
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
P-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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Featuring a proprietary high cell density design, these transistors are engineered to provide superior functionality in a variety of applications. Their small outline package makes them suitable for space-constrained designs without sacrificing performance. The NDS332P is the perfect choice for designers looking to optimize power management in their projects, thanks to its high efficiency and low power consumption
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 1 A | Rds On - Drain-Source Resistance | 350 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 500 mW |
Channel Mode | Enhancement | Series | NDS332P |
Configuration | Single | Fall Time | 30 ns |
Height | 1.12 mm | Length | 2.9 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 30 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 25 ns |
Typical Turn-On Delay Time | 8 ns | Width | 1.4 mm |
Part # Aliases | NDS332P_NL | Unit Weight | 0.001270 oz |
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