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NDS331N +BOM

Product NDS331N: SOT-23 MOSFETs compliant with ROHS regulations

NDS331N General Description

The NDS331N is an N-Channel logic level enhancement mode power field effect transistor, manufactured using cutting-edge DMOS technology by ON Semiconductor. With a focus on minimizing on-state resistance, these transistors are ideal for a variety of low voltage applications such as notebook computers, portable phones, PCMCIA cards, and battery-powered circuits. The compact surface mount package of the NDS331N ensures a small outline footprint, making it a versatile choice for projects where space is at a premium

Key Features

  • High-speed switching performance
  • Low power consumption
    RDS(ON) = 0.15 Ω @ VGS= 5 V
  • Ultra-compact surface mount package
    RDS(ON) = 0.12 Ω @ VGS= 3.9 V
  • Robust electrostatic discharge (ESD) protection
  • Low leakage current and high surge capability
    RDS(ON) = 0.18 Ω @ VGS= 4.5 V
  • Silicone-based encapsulation for moisture resistance

Application

  • Great for all kinds of projects.
  • Works well in many settings.
  • Versatile and user-friendly.

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 1.3 A Rds On - Drain-Source Resistance 210 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 500 mV
Qg - Gate Charge 5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Series NDS331N
Configuration Single Fall Time 25 ns
Height 1.12 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 25 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 5 ns Width 1.4 mm
Part # Aliases NDS331N_NL Unit Weight 0.001129 oz

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