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See Technical Specifications

RFP12P08 +BOM

TO-220AB Package Type

Manufacturer:

HARRIS SEMICONDUCTOR
Mfr.Part #:

RFP12P08
Datasheet:

RFP12P08 Datasheet (PDF)
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8541.29.00.95
Case Connection:

DRAIN
EDA/CAD Models:

Request Free CAD Models for RFP12P08

RFP12P08 General Description

12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETsThe RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistorsdesigned for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.Features• 12A, 80V and 100V• rDS(ON)= 0.300Ω• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Specifications

Part Life Cycle Code	Obsolete	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8541.29.00.95
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	80 V	Drain Current-Max (Abs) (ID)	12 A
Drain Current-Max (ID)	12 A	Drain-source On Resistance-Max	0.3 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	300 pF
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e0	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	P-CHANNEL
Power Dissipation Ambient-Max	75 W	Power Dissipation-Max (Abs)	75 W
Pulsed Drain Current-Max (IDM)	30 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN LEAD
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	450 ns	Turn-on Time-Max (ton)	235 ns