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NDC7002N +BOM

SOT-23-6 MOSFETs ROHS

NDC7002N General Description

The NDC7002N product, featuring dual N-Channel enhancement mode power field effect transistors, is a top-of-the-line offering from Fairchild. Utilizing Fairchild's high cell density DMOS technology, these transistors boast impressive performance and reliability. With a focus on minimizing on-state resistance and enabling fast switching, these devices are tailor-made for low voltage applications that demand a high current high side switch. Whether you're looking for ruggedness, reliability, or speed, the NDC7002N won't disappoint

Key Features

  • 0.51 A, 50 V. RDS(ON) = 2 Ω @ VGS = 10 V.
  • High density cell design for extremely low RDS(ON).
  • Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
  • High saturation current.

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 50 V
Id - Continuous Drain Current 510 mA Rds On - Drain-Source Resistance 2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 1 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 960 mW
Channel Mode Enhancement Series NDC7002N
Configuration Dual Fall Time 6 ns
Height 1.1 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 6 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 11 ns Typical Turn-On Delay Time 6 ns
Width 1.6 mm Part # Aliases NDC7002N_NL
Unit Weight 0.001270 oz

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