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NDS0605 +BOM

60V 180mA 5Ω@500mA,10V 360mW 3V@250uA P Channel SOT-23 MOSFETs ROHS

NDS0605 General Description

The NDS0605 P-Channel enhancement mode power field effect transistor is a cutting-edge innovation that sets new standards in performance and efficiency. By leveraging ON Semiconductor's high cell density DMOS technology, this product boasts minimal on-state resistance, allowing it to handle demanding applications with ease. With its robust construction and rapid switching capabilities, the NDS0605 can deliver pulsed currents up to 1A, making it an excellent choice for a wide range of applications. Whether you're looking for a low-voltage solution or require a high-side switch, this product is designed to meet your needs with precision

Key Features

  • -0.18 A, -60 V. RDS(ON) = 5 Ω @ VGS= -10 V.
  • Voltage controlled p-channel small signal switch.
  • High density cell design for extremely low RDS(ON).
  • High saturation current.

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 180 mA Rds On - Drain-Source Resistance 5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 2.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 360 mW
Channel Mode Enhancement Series NDS0605
Configuration Single Fall Time 6.3 ns
Height 1.2 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 6.3 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 2.5 ns Width 1.3 mm
Part # Aliases NDS0605_NL Unit Weight 0.000282 oz

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