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NDS7002A +BOM

SOT-23 MOSFETs ROHS

NDS7002A General Description

Leveraging ON Semiconductor's high cell density technology, the NDS7002A N-channel enhancement mode field effect transistor sets a new standard in performance and efficiency. Its optimized design ensures minimal on-state resistance, enabling seamless operation in demanding applications. Capable of supporting up to 400 mA DC and delivering peak currents of 2 A, this transistor excels in scenarios requiring precise control and rapid response. Whether used in servo motor systems, MOSFET gate drivers, or other switching tasks, this product excels in low voltage environments while maintaining high reliability

Key Features

  • Advanced Power Management.
  • Silicon Based Technology.
  • Fast Switching Performance.

Application

  • Suitable for various needs.
  • Works well in all situations.
  • Efficient and practical choice.

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 280 mA Rds On - Drain-Source Resistance 1.2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 300 mW Channel Mode Enhancement
Series NDS7002A Configuration Single
Height 1.2 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Width 1.3 mm
Part # Aliases NDS7002A_NL Unit Weight 0.000282 oz

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